? semiconductor components industries, llc, 2014 november, 2014 ? rev. 14 1 publication order number: tip100/d tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) plastic medium-power complementary silicon transistors designed for general ? purpose amplifier and low ? speed switching applications. features ? high dc current gain ? h fe = 2500 (typ) @ i c = 4.0 adc ? collector ? emitter sustaining voltage ? @ 30 madc v ceo(sus) = 60 vdc (min) ? tip100, tip105 = 80 vdc (min) ? tip101, tip106 = 100 vdc (min) ? tip102, tip107 ? low collector ? emitter saturation voltage ? v ce(sat) = 2.0 vdc (max) @ i c = 3.0 adc = 2.5 vdc (max) @ i c = 8.0 adc ? monolithic construction with built ? in base ? emitter shunt resistors ? pb ? free packages are available* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to ? 220ab case 221a style 1 marking diagram darlington 8 ampere complementary silicon power transistors 60 ? 80 ? 100 volts, 80 watts www. onsemi.com 1 2 3 4 tip10x = device code x = 0, 1, 2, 5, 6, or 7 a = assembly location y = year ww = work week g = pb ? free package tip10xg ayww see detailed ordering and shipping information on page 3 of this data sheet. ordering information style 1: pin 1. base 2. collector 3. emitter 4. collector
tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) www. onsemi.com 2 maximum ratings rating symbol tip100, tip105 tip101, tip106 tip102, tip107 unit collector ? emitter voltage v ceo 60 80 100 vdc collector ? base voltage v cb 60 80 100 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous ? peak i c 8.0 15 adc base current i b 1.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 80 0.64 w w/ c unclamped inductive load energy (1) e 30 mj total power dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c operating and storage junction temperature range t j , t stg ? 65 to + 150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 1.56 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. i c = 1.1 a, l = 50 mh, p.r.f. = 10 hz, v cc = 20 v, r be = 100 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (1) (i c = 30 madc, i b = 0) tip100, tip105 tip101, tip106 tip102, tip107 v ceo(sus) 60 80 100 ? ? ? vdc collector cutoff current (v ce = 30 vdc, i b = 0) tip100, tip105 (v ce = 40 vdc, i b = 0) tip101, tip106 (v ce = 50 vdc, i b = 0) tip102, tip107 i ceo ? ? ? 50 50 50 adc collector cutoff current (v cb = 60 vdc, i e = 0) tip100, tip105 (v cb = 80 vdc, i e = 0) tip101, tip106 (v cb = 100 vdc, i e = 0) tip102, tip107 i cbo ? ? ? 50 50 50 adc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 8.0 madc on characteristics (1) dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) (i c = 8.0 adc, v ce = 4.0 vdc) h fe 1000 200 20,000 ? ? collector ? emitter saturation voltage (i c = 3.0 adc, i b = 6.0 madc) (i c = 8.0 adc, i b = 80 madc) v ce(sat) ? ? 2.0 2.5 vdc base ? emitter on voltage (i c = 8.0 adc, v ce = 4.0 vdc) v be(on) ? 2.8 vdc dynamic characteristics small ? signal current gain (i c = 3.0 adc, v ce = 4.0 vdc, f = 1.0 mhz) h fe 4.0 ? ? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) tip105, tip106, tip107 tip100, tip101, tip102 c ob ? ? 300 200 pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%.
tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) www. onsemi.com 3 figure 1. darlington circuit schematic base emitter collector 8.0 k 120 base emitter collector 8.0 k 120 ordering information device package shipping tip100 to ? 220 50 units / rail tip100g to ? 220 (pb ? free) 50 units / rail tip101 to ? 220 50 units / rail TIP101G to ? 220 (pb ? free) 50 units / rail tip102 to ? 220 50 units / rail tip102g to ? 220 (pb ? free) 50 units / rail tip105 to ? 220 50 units / rail tip105g to ? 220 (pb ? free) 50 units / rail tip106 to ? 220 50 units / rail tip106g to ? 220 (pb ? free) 50 units / rail tip107 to ? 220 50 units / rail tip107g to ? 220 (pb ? free) 50 units / rail 80 0 0 20 40 60 80 100 120 160 figure 2. power derating t, temperature ( c) p d , power dissipation (watts) 40 20 60 140 t c 4.0 0 2.0 1.0 3.0 t a t a t c
tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) www. onsemi.com 4 figure 3. switching times test circuit 5.0 0.1 figure 4. switching times i c , collector current (amp) t, time (s) 2.0 1.0 0.5 0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 0.3 0.7 pnp npn t f t r t s t d @ v be(off) = 0 v v 2 approx +8.0 v v 1 approx -12 v t r , t f 10 ns duty cycle = 1.0% 25 s 0 r b 51 d 1 +4.0 v v cc -30 v r c tut 8.0 k 120 scope for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, eg: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 3.0 0.2 0.1 0.07 5.0 7.0 figure 5. thermal response t, time (ms) 1.0 0.01 0.01 0.5 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z jc(t) = r(t) r jc r jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 0.7 0.3 0.07 0.03 0.02 20 1.0 figure 6. active ? region safe operating area v ce , collector-emitter voltage (volts) 10 5.0 2.0 1.0 0.02 2.0 5.0 20 50 100 bonding wire limited thermally limited @ t c = 25 c 0.5 i c , collector current (ma) t j = 150 c d- c 1ms 100 s 0.2 0.1 10 tip100, tip105 tip101, tip106 tip102, tip107 0.05 second breakdown limited curves apply below rated v ceo 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown
tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) www. onsemi.com 5 300 0.1 v r , reverse voltage (volts) 30 2.0 5.0 10 20 100 50 0.2 0.5 1.0 c, capacitance (pf) 100 50 t j = 25 c c ib 70 c ob pnp npn figure 7. small ? signal current gain 10,000 1.0 f, frequency (khz) 10 20 50 100 200 1000 2.0 5.0 10 3000 500 100 t c = 25 c v ce = 4.0 vdc i c = 3.0 adc 1000 pnp npn figure 8. capacitance 50 500 h fe , small-signal current gain 5000 2000 300 200 30 20 200
tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) www. onsemi.com 6 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 20,000 0.1 figure 9. dc current gain i c , collector current (amp) 200 0.2 0.3 0.5 1.0 2.0 10 500 1000 300 h fe , dc current gain 2000 3000 v ce = 4.0 v 0.7 3.0 npn tip100, tip101, tip102 pnp tip105, tip106, tip107 figure 10. collector saturation region 3.0 0.3 i b , base current (ma) 1.0 0.5 1.0 2.0 10 30 1.8 i c = 2.0 a t j = 25 c 4.0 a 2.2 2.6 0.7 5.0 3.0 0.1 i c , collector current (amp) 0.2 0.3 0.5 1.0 2.0 5.0 10 2.5 2.0 1.5 1.0 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v, voltage (volts) figure 11. ?on? voltages v be @ v ce = 4.0 v 3.0 10,000 5000 t j = 150 c 25 c -55 c 20 i c , collector current (amp) h fe , dc current gain v ce = 4.0 v t j = 150 c 25 c -55 c 1.4 6.0 a i b , base current (ma) t j = 25 c i c , collector current (amp) v, voltage (volts) t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 v be @ v ce = 4.0 v 5.0 7.0 20,000 0.1 200 0.2 0.3 0.5 1.0 2.0 10 500 1000 300 2000 3000 0.7 3.0 10,000 5000 5.0 7.0 7000 700 3.0 7.0 3.0 0.3 1.0 0.5 1.0 2.0 10 30 1.8 2.2 2.6 0.7 5.0 20 1.4 3.0 7.0 i c = 2.0 a 4.0 a 6.0 a 0.7 7.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 5.0 10 2.5 2.0 1.5 1.0 0.5 3.0 0.7 7.0
tip100, tip101, tip102 (npn); tip105, tip106, tip107 (pnp) www. onsemi.com 7 package dimensions to ? 220 case 221a ? 09 issue ah notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warrant y, representation or guarantee regarding the suitability of it s products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 tip100/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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